Spatially resolved electrical parameters of silicon wafers and solar cells by contactless photoluminescence imaging

A contactless method to extract spatially resolved electrical parameters of silicon wafers and silicon solar cells is introduced. The method is based on photoluminescence imaging and can be applied throughout the solar cell fabrication process, even before junction formation. To validate the method, the parameters obtained by it are compared to the ones obtained by the well-established Suns-Voc measurement. Good agreement is obtained.