Stress-induced leakage current (SILC) is studied in ultrathin ( approximately 50 AA) gate oxides grown in N/sub 2/O or O/sub 2/ ambient, using rapid thermal processing (N/sub 2/O oxide or control oxide, respectively). MOS capacitors with N/sub 2/O oxides exhibit much suppressed SILC compared to the control oxide for successive ramp-up, constant voltage DC, and AC (bipolar and unipolar) stresses. The mechanism for SILC is discussed, and the suppressed SILC in N/sub 2/O oxide is attributed to suppressed interface state generation due to nitrogen incorporation at the Si/SUO/sub 2/ interface during N/sub 2/O oxidation.>
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Yoon et al. (1993) studied this question.
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