A 50-keV focused Ga+ beam was used to expose dots in a negative-acting bilevel resist structure in an exposure range between 1 μs/pixel and 4 s/pixel. The radii of the resist dots were used to determine the current-density profiles of the Ga+ ion microprobe down to six orders of magnitude below the peak versus system magnification and ion source current. The effect of the beam profile on the limiting pitch for densely packed resist dot arrays was modeled and compared to experimental results.
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Kubena et al. (1987) studied this question.
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