Growth of semi‐polar (11‐22)GaN on a (113)Si substrate by selective MOVPE

MOVPE growth of uniform (11‐22)GaN layer was attempted on a patterned (113)Si substrate. The growth of GaN was achieved on (1‐11) facets of the Si selectively. The optimum design of the patterned substrate and the growth conditions were studied to get the semi‐polar GaN layer with high optical and crystalline quality. The cathode‐luminescence spectra showed a sharp edge emission peak of which half width was as narrow as 10 meV. The X‐ray rocking curves showed that the (11‐22) diffraction was as narrow as 300 arcsec. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)