Development of High‐Power Density Interleaved dc/dc Converter with SiC Devices

SUMMARY We developed an interleaved dc/dc converter with SiC devices. We applied full‐SiC modules including MOSFETs and SBDs to the interleaved dc/dc converter to achieve a high‐power density. An SiC has a high temperature resistance, which facilitates an improvement in high‐frequency drives. We achieved a high‐power density by utilizing this high temperature resistance. We also fabricated a prototype and tested it with loads up to 65 kW.