An 4.7 GHz low‐power cross‐coupled GaN HEMT oscillator

A GaN HEMT oscillator implemented with the WIN 0.25 μm GaN HEMT technology is designed. The oscillator consists of two HEMT amplifiers with cross‐coupled feedback topology. With the supply voltage of VDD = 0.4 V, the GaN VCO current and power consumption of the oscillator are 6.673 mA and 2.669 mW, respectively. The oscillator can generate differential signal at 4.7 GHz and it also supplies output power − 5.3 dBm. At 1 MHz frequency offset from the carrier the phase noise is −121.77 dBc/Hz. The die area of the GaN HEMT oscillator is 2 × 1 mm2.