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Point-contact warm carrier devices were fabricated using n-type InSb instead of p-type Ge. The incident angle dependence of the detected voltage was measured at 10.6 µm and 118 µm laser radiations. It was confirmed that the detected signal of the fabricated devices was due to the induced current by antennae and not due to the photon-drag effects.
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Yasuoka et al. (1988) studied this question.
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