Performance Improvement of p-Channel Tin Monoxide Transistors With a Solution-Processed Zirconium Oxide Gate Dielectric

This letter reports the fabrication of p-channel tin monoxide (SnO) thin-film transistors (TFTs) with a high-permittivityzirconium oxide (ZrO2) gate insulatorfilm, which were prepared by a low-cost spin-cast method. The spincast ZrO2dielectrics exhibit a low leakage current density of 4.5× 10-8A/cm2at 1 MV/cm. Introducing the ZrO2dielectric in top-type SnO TFTs allows for a reduction in the driving gate voltage range from 80 to 10 V, as compared with devices with a thermal SiO2gate insulator. Additionally, a high field-effect mobility of 2.5 cm2/Vs and an ION/OFF of 3 × 103were preserved.