Sol-gel zinc tin oxide (ZTO) thin film transistors (TFTs) were fabricated at a low temperature of 250°C using an ultraviolet (UV) photo-annealing process. A stable ZTO sol-gel solution was produced and showed considerable absorption in UV due to the incorporation of a chelating agent, acetylacetone, which also acts as a UV-activator. The UV photo-annealing and vacuum annealing improve the electrical performance of the ZTO TFT with mobility of 2 cm 2 / V·s by effective dissociation of organic groups and promotion of metal-oxide-metal bonds formation, confirmed by X-ray photoelectron spectroscopy of the ZTO films.
No takes yet. Share an insight, caveat, or question.
Hwang et al. (2012) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: