In this letter, we report a solution-processed hafnium indium zinc oxide (HIZO) thin-film transistors (TFTs) with an Al-doped ZrO2(AZO) gate dielectric. The AZO thin films were identified as an amorphous phase up to the annealing temperature of 600 °C and had a smooth surface with root-mean-square roughness of2/Vs, a small subthreshold swing of 0.4 V/decade, and a high ON/OFF ratio of 107, which can satisfy the backplate requirements for flat panel displays.
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Gao et al. (2014) studied this question.