Impedance spectroscopy methods were proposed for direct evaluation of electrical properties of the AlGaN/GaN heterostructures. The impedance spectra were measured using a two contact mercury probe. Application of the proper distributed elements equivalent circuits enabled to evaluate not only the typically obtained parameters of the heterostructures such as sheet carriers concentration and its pinch off voltage but also the dependence of the channel sheet resistance and the mobility of 2DEG on d.c. gate bias (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Paszkiewicz et al. (2013) studied this question.