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We report a study of the effects of large, external uniaxial stress (T) along [001] and [110] on the optical properties of a strained layer (001) In0.21{Ga}0.79$As/GaAs single quantum well. For T{∥}[110] we have observed a red shift of several peaks and an increase in the intensities of several ``symmetry-forbidden'' transitions; effects not seen for T{∥}[100]. This phenomenon is due to an electric field along [001] induced by the piezoelectric coupling for T{∥}[110].
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Qiang et al. (1991) studied this question.
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