The spin orientation of a magnetic dopant in a zinc-blende semiconductor strongly influences the spatial structure of an acceptor state bound to the dopant. The acceptor state has a roughly oblate shape with the short axis aligned with the dopant's core spin. For a Mn dopant in GaAs the local density of states at a site 8 {} away from the dopant can change by 90% when the Mn spin orientation changes. These changes in the local density of states could be probed by scanning tunneling microscopy to infer the dopant's spin orientation.
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Tang et al. (2005) studied this question.
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