High‐voltage photoconductive semiconductor switches fabricated on semi‐insulating HVPE GaN:Fe template

This is the authors' abstract. We don't add key points for this paper.

In this work, high‐voltage photoconductive semiconductor switches (PCSSs) with inter‐digitated contact electrodes are directly fabricated on semi‐insultating HVPE GaN:Fe template. The PCSS exhibits a cutoff wavelength of 365 nm and a dark resistivity of ∼1010 Ω cm. A maximum blocking voltage of more than 1100 V is obtained, corresponding to a breakdown electric field higher than 1.57 MV/cm for the GaN:Fe template. When excited by a 266 nm ultraviolet pulsed laser, the PCSS under 550 V bias could produce a peak photocurrent density of 387 A/cm2 within a rise time of ∼20 ns. The fall time of the photocurrent pulse is mainly RC time limited. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)