Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors

Extensive research has been conducted on wide-bandgap semiconductor diamond for the advancement of high-power, high-frequency, and high-temperature electronic devices. The author has established long-term collaboration with Prof. Koide, focusing on producing p-type hydrogen-terminated diamond (H-diamond) and boron-doped oxygen-terminated diamond (O-diamond) based metal-oxide-semiconductor field-effect transistors (MOSFETs). This article presents our primary research findings on the fabrication of enhancement-mode H-diamond MOSFETs and MOSFET logic circuits, as well as the high-temperature operation of the boron-doped O-diamond MOSFETs.