High-Performance Transparent AZO TFTs Fabricated on Glass Substrate

High-performance transparent low-temperature top-gate type aluminum doped zinc oxide (AZO) thin-film transistors (TFTs) ($W/L=100$or 10μ m) are successfully fabricated on glass substrate. All the process temperature is below 100∘ C. ForVG=-2to 5 V, the TFTs using sputtering deposit AZO layer at room temperature as channel layer exhibits excellent properties, such as a saturation mobilityμₛof 285cm²/ V· s, a linear field effect mobilityμₗof 143cm²/ V· s, a threshold voltageVₜₕof 0.9 V, a steep subthreshold swing of 108 mV/decade, a low off-state current valueIoffof5× 10⁻¹³~ A, a high ON/OFF ratio of2× 10⁹and a high transmittance of 82.5%. The results highlight that excellent device performance can be realized in AZO TFTs. Note that this is the best performance of AZO TFT ever reported.