We have investigated the effects of impurities in starting silicon films on excimer-laser-induced lateral growth characteristics. The films should have a low concentration of impurities to achieve long lateral growth, since impurities, such as carbon, nitrogen, oxygen, and fluorine, in the films were found to affect the lateral growth characteristics severely. A stacked structure with a capping layer is also considered essential for maintaining pure molten Si during lateral growth.
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Hiramatsu et al. (2006) studied this question.
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