An Advanced Sample Structure for Large-Grain Growth by Excimer Laser Crystallization

We have developed an advanced sample structure for large-grain growth by excimer-laser crystallization of Si. More than 10 μ m long grains were grown laterally in a 50 nm thick Si layer by phase-modulated excimer-laser annealing. A photosensitive Si O x capping layer prepared using a conventional plasma-enhanced chemical vapor deposition apparatus enables this longer lateral growth with lower irradiated intensity of laser light than those with the conventional Si O 2 capping layer.