In addition to broad photoluminescence (PL) bands at 3.2 and 2.8 eV, Mg-doped GaN also exhibits a characteristic red PL band centered around 1.75 eV. Using optically detected magnetic resonance (ODMR), a deep defect with an isotropic g-value of 2.001 and a linewidth of 5 mT is found to be responsible for the red luminescence. Various shallow and deep donors are also found to participate in this radiative transition. The results are compared to the ODMR of n-type GaN.
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Bayerl et al. (1999) studied this question.