The electrical properties of Ba1- x K x BiO3/Nb-doped SrTiO3 all-oxide-type Schottky junctions have been investigated by measuring their current-voltage and capacitance-voltage ( C-V ) characteristics at room temperature. The relative permittivity ε r of Nb-doped SrTiO3 could be approximated as ε r(E)=b/√ a+E 2, where E is the electric field, a and b are constants. Taking into account the field dependent permittivity and interfacial layer, we carried out a quantitative analysis of the potential barrier and 1/C 2-V characteristics. The non-linear 1/C 2-V characteristics could be quantitatively explained by considering the field dependent permittivity and the bias dependence of the barrier height due to the presence of the interfacial layer.
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Yamamoto et al. (1997) studied this question.
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