Deprotection reactions of chemically amplified resists during exposure are observed by using the in-situ FT-IR with the 248nm light source, and resist profiles are simulated using the activation energy and the prefactor calculated. The resists used in this experiment are poly(p-hydroxystyrene) (PHS) protected by Ethoxyethyl (EOE) group, by tert-Butoxycarbonyl (t-BOC) group and by these heterogeneous protection groups. The activation energy for the EOE resist is much lower than that for the t-BOC resist. The existence of heterogeneous protection groups affect mutually deprotection reactions; the EOE group additions to t-BOC resist reduce the activation energy for the deprotection reaction of t-BOC group. It is confirmed that existences of heterogeneous protection groups affect the formation of resist pattern profile by lithography simulator.
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Miyake et al. (2001) studied this question.