Recent progress in mobile equipments (ex. smartphone and tablet-PC) requires further effort in developing higher density and higher reliability nonvolatile semiconductor memories. A breakthrough in the field of nonvolatile memories was the invention of the Flash memory by Prof. Fujio Masuoka [1]. The Flash memory had many advantages in comparison with other nonvolatile memories. Therefore, the development of Flash memory has been explosively accelerated.
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S. Aritome (2013) studied this question.
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