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The paper shows an influence of doping on lattice constant of a semiconductor.Three effects are discussed: (i) "size" echect caused by a different ionic radii of dopant and host atoms, (ii) lattice expansion by free electrons proportionally to the deformation potential of the conduction-band minimum occupied by this charge, (iii) different thermal expansion of the undoped and doped samples.The experiments have been performed by using the high resolution X-ray dichractioii at 77-770 K oii AlGaAs:Te and GaAs:Si.
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Leszczyński et al. (1995) studied this question.
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