and a conventional silicon-on-insulator (SOI) waveguide by utilizing the anti-symmetric second-order resonance mode of the cavity and engineering its geometry to reduce the modal size to less than 5 nm. The electromagnetic field efficiently coupled to the small cavity, leading to extreme enhancement of the field intensity. For a 2-nm-gap cavity, the intensity enhancement was calculated to be more than 100,000,000 compared to that of light in an SOI waveguide.
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Jin et al. (2016) studied this question.
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