Oxidation Resistance of Hafnium Diboride Ceramics with Additions of Silicon Carbide and Tungsten Boride or Tungsten Carbide

Dense samples of HfB 2 –SiC, HfB 2 –SiC–WC, and HfB 2 –SiC–WB were prepared by field‐assisted sintering. The WB and WC additives were incorporated by solid solution into the HfB 2 and the HfC that formed during sintering. Oxidation of the samples was studied using isothermal furnace oxidation between 1600° and 2000°C. Sample microstructure and chemistry before and after oxidation were analyzed by scanning electron microscopy and X‐ray diffraction. The addition of WC and WB did not alter oxidation kinetics of the baseline HfB 2 –SiC composition below 1800°C; however, at 2000°C, HfB 2 –SiC–WC and HfB 2 –SiC–WB had oxide scales that were 30% thinner than the oxide scale of HfB 2 –SiC. It is believed that WC and WB promoted liquid‐phase densification of the HfO 2 scale, thereby reducing the path of oxygen ingress, during oxidation.