Conduction band electrons, valence holes and subsequently self-trapped excitons (STEs) are created in CaF 2 and SrF 2 by two-photon absorption of 5.9 eV photons. Transient absorption after femtosecond pulse excitation is measured at probe wavelengths of 3.0 eV and 4.4 eV, respectively. Transient absorption of 3.0 eV photons yields a fast initial response in SrF 2 due to absorption by conduction band electrons, while in CaF 2 we sample the F centre part of the STE at 3.0 eV and determine its formation time constant to be 690 fs. Excitation at 3.0 eV also yields a reduction in STE luminescence sampled nanoseconds after STE creation that is attributed to a forced recombination of the nearest-neighbour defect pair. Probing with 4.4 eV photons yields much weaker absorption but confirms results for 3.0 eV photons. Additionally we observe stronger absorption due to the formation of long living defects.
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Lindner et al. (2001) studied this question.
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