Introducing 157 nm Full Field Lithography

157 nm lithography is currently considered as the main technology for the manufacturing of critical 65 nm node layers and beyond. After a number of potential show stoppers of 157 nm have been removed in the last three years, the final phase of development will now start based on the first full-field step and scan exposure systems. This paper describes the status and progress of the IMEC 157 nm program, that is aiming to remove the remaining 157 nm engineering challenges. The first full field scanner (ASML Micrascan VII) is currently under installation at IMEC. The investigation on a number of full-field issues already started. Results on 157 nm resist full field patterning, on reticle handling including vacuum ultra violet cleaning, and on hard pellicle printing are discussed in this paper.