In this letter, we propose a W/WO 3−x based three-terminal synapse device for a neuromorphic system. To understand the effect of channel materials on synapse characteristics, we evaluate various channel metals (titanium, molybdenum, and tungsten). Our results reveal that the W channel which forms a relatively less stable oxide shows a high on/off ratio and linear conductance change. In addition, the effect of gate bias on the W/WO 3−x interface is directly observed through energy-dispersive spectrometry line profiles. Finally, owing to the excellent performance of the W/WO 3−x -based device, high accuracy is achieved for pattern recognition in neuromorphic systems.
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Go et al. (2019) studied this question.
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