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Fast sensitive photovoltaic detectors operating in the 77–130°K temperature range are prepared from (CdHg)Te epitaxial layers. Junction-formation technique involves deviations from stoichiometry. The spectral response per quantum at 77°K is flat over a wide wavelength range (3–14 μm). Detectivity measurements in this wavelength range yield values at 77 °K between 3×109 and 3×1010 cm Hz1/2W−1. External quantum efficiency is around 13%. The time constant of these detectors is less than 1 nsec.
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Cohen-Solal et al. (1971) studied this question.
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