TASERs: Possible dc pumped terahertz lasers using interwell transitions in semiconductor heterostructures

We have carried out a theoretical analysis of a possibility to generate coherent continuous-wave terahertz radiation using double-quantum-well heterostructures. The lasing should take place due to inversed population of the wells, created by electron flow through the structure under the effect of applied dc voltage. Estimates show that, e.g., 3 THz radiation with a relatively narrow line (Δf/f≲10−5) and power of the order of 0.1 mW may be generated using structures with area as small as ∼100 μm2, at temperatures up to ∼30 K. For the experimental implementation of this opportunity, a special design is suggested to reduce absorption of terahertz radiation.