Steep Slope Field-Effect Transistors With Ag/TiO2-Based Threshold Switching Device

In this letter, we demonstrate a steep slope field-effect transistor (FET) using a threshold switching (TS) device. The Ag/TiO2-based TS device reported in our previous work was implemented in series with the drain region of a transistor. Since the TS device has an abrupt transition between the OFF- and ON-states and vice versa, the transistor has a 5-mV/decade subthreshold slope and a high ON/OFF-current ratio (ION/IOFF) of >107with a low drain voltage (0.3 V). Furthermore, the threshold voltage (Vth,FET) of the transistor can be tuned by controlling the thickness of the TS device.