A single-sided PHINES SONOS memory with hot-hole injection in program operation and Fowler-Nordheim (FN) tunneling in erase operation has been demonstrated for high program speed and low power applications. High programming speed (/spl Delta/VT/program time) of 5 V/20 μs, low power consumption of P/E, high endurance of 10 K, good retention, and scaling capability can be demonstrated.
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Wu et al. (2006) studied this question.
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