A Broadband 200 GHz Amplifier with 17 dB Gain and 18 mW DC-Power Consumption in 0.13 μ m SiGe BiCMOS

This letter presents a 200 GHz amplifier for low-power high data-rate wireless communications. With large bandwidth and energy efficiency as concurrent goals, cascode stages for high power gain and dual-band matching networks to maximize the bandwidth have been employed. The resulting amplifier has been implemented in a 450 GHz SiGe BiCMOS technology, requiring a circuit area of only 800 μm × 300 μm. The characterized circuit exhibits 16.9 dB of maximum power gain, 44 GHz of bandwidth and -3.5 dBm of output power at 1 dB compression, while requiring only 18 mW of DC-power.