A fabrication method and emission characteristics of polycrystalline silicon (poly-Si) gated field emitters have been presented. The fabrication combines mold emitter fabrication and anodic bonding techniques to transfer the emitters to a Pyrex glass substrate. The tantalum gated structures were fabricated by an etch-back technique using a photoresist process, and a gate opening of about 0.7 µ m has been successfully obtained. The emission characteristics of the fabricated poly-Si field emitters were also presented, showing high current drivability.
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Hashiguchi et al. (1995) studied this question.
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