Thermoelectric properties of n‐type Mg2Si0.6–ySby Sn0.4 compounds

The thermoelectric properties of n‐type Mg2Si0.6–y Sby Sn0.4 solid solutions with a small Sb‐doping ratio on the Si‐site (y = 0.0–0.015) were prepared by an induction melting/hot‐pressing method. The electrical conductivity, Seebeck coefficient and thermal conductivity have been measured as a function of temperature from 300 K to 820 K. A power factor ∼2.28 × 10–3 Wm–1 K–2 at 574 K for y = 0.01, and a dimensionless figure of merit ZT ∼0.68 at 724 K for y = 0.005 are attained. Given the potential of these materials for utilization in thermoelectric devices in a medium temperature range, the thermoelectric compatibility of Mg2Si0.6–y Sby Sn0.4 samples has been also addressed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)