Arsenic thin film was grown on a CdTe substrate by molecular-beam epitaxy. The growth process of the film was characterized in situ by reflection high-energy electron diffraction pattern and the film structure was investigated by a transmission electron microscope. The conductivity as a function of temperature was measured by the van de Pauw method. A semimetal-to-semiconductor transition in an arsenic thin film with a thickness equal to or thinner than a critical thickness of 40 nm has been observed.
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He et al. (2003) studied this question.
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