Low-doping Effects of Nanostructure ZnO: Sn tin films annealed at different temperature in Nitrogen ambient to be applied as an Anti-reflecting coating (ARC)

Problem statement: The focus of this research is to discover the significant influences of substituting low concentration Sn at Zn-site as an Anti-Reflecting Coating (ARC) for Zn 1-x Sn x O compound.The effects of tin dopants on the structural and morphology properties of ZnO thin films prepared using the sol-gel method were investigated.Approach: The effects of annealing temperature on the deposited films were also investigated at three different temperatures of 400, 500 and 600°C.The composition of the Zn 1-x Sn x O sample are x = 0.00, 0.05, 0.10 and 0.15.As a starting material, zinc acetate dehydrate was used; 2-methoxyethanol and mono ethanolamine were used as solvent and stabilizer, respectively.The dopant source was tin chloride.Results: Microstructural and surface morphology of samples were characterized by using Scanning Electron Microscopy (SEM).The crystallinity and defects are studied using X-Ray Diffraction (XRD).Molecular bonding is carried out using Raman spectroscopy and optical study of band gap is investigated using UV-VIS measurement.Conclusion: The value of band gap obtained increased slightly as the concentration of Sn increased.The increment of the band gap is acceptable as a requirement for good anti-reflecting coating element.Therefore these films can be applied on silicon solar cell.