Recent experiments on the DX behaviour of Si in AlGaN alloys are reviewed. From persistent photoconductivity, light‐induced electron spin resonance, and thermal quenching experiments as well as from the thermal activation of the generation‐recombination noise, a quantitative configuration coordinate diagram is constructed for pure AlN and Al0.75Ga0.25N. The effects of DX centres on the properties of AlGaN alloys with lower Al concentration are discussed.
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Brandt et al. (2002) studied this question.
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