Molecular-beam-epitaxy-grown GaAs field-effect transistors (FETs) using a delta-doped channel are discussed. FETs having gate lengths of 1.3 mu m showed transconductances as high as 290 mS/mm at a current density of 200 mA/mm. The measured f/sub T/ was 14.5 GHz and the extracted f/sub max/ was 30 GHz. These results are the best reported in a FET with this material structure having a delta-doped channel.>
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Hong et al. (1989) studied this question.
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