Lattice parameter profiles and the chemical structure of InP self-assembled islands grown on GaAs(001) were determined with x-ray resonant scattering. By accessing four different photon energies, near x-ray absorption edges of two of the atomic species present on the samples, composition maps of all four atomic constituents of these islands were obtained. This experiment was performed for samples grown at two different temperatures and the effect of temperature was associated to Ga-interdiffusion and strain relief in the dots.
No takes yet. Share an insight, caveat, or question.
Coelho et al. (2008) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: