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The strategy of metal doping was performed to improve surface-enhanced Raman scattering (SERS) performance for semiconductor TiO2 and deeply understand the contributing/controlling factors of semiconductor (TiO2)-to-molecule charge transfer (CT) mechanism contributed to SERS. The amount and intrinsic nature of doping ions have a great influence on SERS enhancement. An appropriate doping amount of Fe3+, Co2+, and Ni2+ is 0.5%, 1%, 3% mol., respectively, which can enormously improve SERS properties of TiO2 substrate. The considerable SERS enhancement is attributed to doped metal ions, which can embed abundant doping level in TiO2 band gap contributing to semiconductor (TiO2)-to-molecule CT and SERS effect.
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Yang et al. (2011) studied this question.
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