High performance intermixed p-doped quantum dot superluminescent diodes at 1.2 µm

A 1.2 µm high power and broadband quantum dot superluminescent diode has been successfully realised by post-growth annealing process on a p-doped InAs/InGaAs dot in well structure. The device exhibits a high output power of above 190 mW with ∼80 nm bandwidth.