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In this brief, we have investigated the program disturb characteristics caused by drain-induced barrier lowering (DIBL) in a 32-nm nand Flash memory device. It was found that theVTHshift of the (N+ 2)th erased state cell is larger than that of the (N+ 1)th erased state cell if it is assumed that the channel of theNth cell is cut off. It is revealed that the cut off is caused by a cell-to-cell coupling effect that is becoming more severe in the development of high-density Flash memory arrays.
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Kang et al. (2011) studied this question.
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