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Direct observation of structural dynamics of a 300 ps laser irradiated silicon crystal is performed by means of picosecond time-resolved x-ray diffraction. Change in x-ray diffraction profiles corresponds to propagation of a strain pulse inside the sample with sound velocity. The strain profiles are simulated by considering carrier dynamics and thermoelastic treatment and well explain the experiments.
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Kishimura et al. (2002) studied this question.
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