We present an analytic model for the I–V characteristics of a single-electron transistor, which may be incorporated in a conventional circuit simulator, such as SPICE. Our model takes as its input the physical SET characteristics (capacitances and tunnel resistances, which may be determined experimentally), and it yieldsI –V curves which are in excellent agreement with the ones obtained from full-scale Monte Carlo simulations.
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Wang et al. (2000) studied this question.
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