We propose and demonstrate the application of high-pressure water-vapor annealing (HWA) to silicon photonic crystals for surface passivation. We find that the photoluminescence intensity from a sample treated with HWA is enhanced by a factor of ∼6. We confirm that this enhancement originates from a reduction in the surface-recombination velocity (SRV) by a factor of ∼0.4. The estimated SRV is as low as 2.1×103 cm/s at room temperature. These results indicate that HWA is a promising approach for efficient surface passivation in silicon photonic nanostructures.
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Fujita et al. (2010) studied this question.
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