In this paper, we have studied the 1/f low frequency noise of self-aligned and non self-aligned InP/InGaAs heterojunction bipolar transistors (HBTs). The total noise of transistor is modeled by two current noise sources. The evolution with geometry, technological process and bias, of the current spectral densities referred to the input and output of the devices, permit us to locate the noise sources. Noise is mainly generated in the intrinsic transistor, and an extra noise perimetric source has been identified for the self-aligned transistors at the emitter periphery.
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Pénarier et al. (2001) studied this question.
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