Four‐junction solar cells using lattice‐matched II–VI and III–V semiconductors

Four‐junction solar cells are designed using lattice‐matched II–VI (ZnCdSeTe) and III–V (AlGaAsSb) semiconductors grown on GaSb substrates. These materials have a zinc blende crystal structure, similar thermal expansion coefficients, and bandgaps that cover the entire solar spectrum. Numerical simulations of the energy conversion efficiencies of various designs for both the AM0 and AM1.5D spectra are performed using published material parameters. These results indicate that the achievable 1 sun AM0 efficiency is 43% for an optimal design and 40% for a more practical design; for comparison the ideal limit provided by Henry's model is 49%. While for the AM1.5D spectrum an optimal design can reach 46% under 1 sun and 55% under 1000 suns while a more practical design can reach 44 and 54%, respectively; for comparison Henry's model gives 51 and 62%, respectively.