Investigation of enhancement-mode AlGaN/GaN nanowire channel high-electron-mobility transistor with oxygen-containing plasma treatment

A novel enhancement-mode (E-mode) AlGaN/GaN high-electron-mobility transistor (HEMT) has been fabricated, by combining nanowire channel (NC) structure fabrication and N 2 O (or O 2 ) plasma treatment. A comparison of two NC-HEMTs with different plasma treatments has been made. The NC-HEMT with N 2 O plasma treatment shows an output current of 610 mA/mm and a peak transconductance of 450 mS/mm. The DIBL of the NC-HEMT with N 2 O plasma treatment is as low as 2 mV/V, and an SS of 70 mV/decade is achieved. The device exhibits an intrinsic current gain cutoff frequency f T of 19 GHz and a maximum oscillation frequency f max of 58 GHz.