It is found by deep level transient spectroscopy (DLTS) that the oxygen thermal donor formation is suppressed in Czochralski silicon doped with donor impurities more than 1×1016 cm−3. The result is explained by a new model considering electron-hole equilibrium. The dopant concentration dependence of the thermal donor formation is analyzed, based on the model, and it is concluded that the thermal donor is a doubly charged donor.
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Wada et al. (1985) studied this question.
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